Comparison of the Power Cycling Performance of Silicon and Silicon Carbide Power Devices in a Baseplate Less Module Package at Different Temperature Swings

被引：0
|
作者：
University of Bremen, Institute for Electrical Drives Power Electronics, and Devices, Bremen, Germany [1 ]
不详 [2 ]
机构：
来源：
Proc. Int. Symp. Power Semicond. Dev. ICs | 1600年 / 175-178期
关键词：
Lifetime data - Lifetime models - Module packages - Package technologies - Power cycling - Silicon carbide MOSFETs - Silicon-carbide power devices - Temperature swings;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
9
引用
收藏
相关论文
共 50 条
  • [41] High-temperature silicon carbide (SiC) power switches in multichip power module (MCPM) applications
    Hornberger, JM
    Mounce, SD
    Schupbach, RM
    Lostetter, AB
    Mantooth, HA
    Conference Record of the 2005 IEEE Industry Applications Conference, Vols 1-4, 2005, : 393 - 398
  • [42] Power losses comparison between Silicon Carbide and Silicon devices for an isolated DC-DC converter
    Pellitteri, Filippo
    Busacca, Alessandro
    Martorana, Carmelo
    Miceli, Rosario
    Stivala, Salvatore
    Messina, Angelo Alberto
    Calabretta, Michele
    Vinciguerra, Vincenzo
    2021 IEEE 15TH INTERNATIONAL CONFERENCE ON COMPATIBILITY, POWER ELECTRONICS AND POWER ENGINEERING (CPE-POWERENG), 2021,
  • [43] A High Temperature Silicon Carbide MOSFET Power Module With Integrated Silicon-On-Insulator-Based Gate Drive
    Wang, Zhiqiang
    Shi, Xiaojie
    Tolbert, Leon M.
    Wang, Fei
    Liang, Zhenxian
    Costinett, Daniel
    Blalock, Benjamin J.
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2015, 30 (03) : 1432 - 1445
  • [44] A High Temperature Silicon Carbide MOSFET Power Module with Integrated Silicon-on-Insulator Based Gate Drive
    Wang, Zhiqiang
    Shi, Xiaojie
    Tolbert, Leon M.
    Wang, Fred
    Liang, Zhenxian
    Costinett, Daniel
    Blalock, Benjamin J.
    2014 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2014, : 4373 - 4380
  • [45] Power devices in Polish National Silicon Carbide Program
    Kubiak, A.
    Sochacki, M.
    Lisik, Z.
    Szmidt, J.
    Konczakowska, A.
    Barlik, R.
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2009, 165 (1-2): : 18 - 22
  • [46] Recent Advances in Silicon Carbide MOSFET Power Devices
    Stevanovic, Ljubisa D.
    Matocha, Kevin S.
    Losee, Peter A.
    Glaser, John S.
    Nasadoski, Jeffrey J.
    Arthur, Stephen D.
    2010 TWENTY-FIFTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC), 2010, : 401 - 407
  • [47] Silicon Carbide power devices - Status and upcoming challenges
    Friedrichs, Peter
    2007 EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, VOLS 1-10, 2007, : 1 - 11
  • [48] Silicon Carbide Material with Power Electronic Control Devices
    Ravikumar, Y. S.
    Gurumurthy, K. S.
    INTERNATIONAL JOURNAL OF COMPUTER SCIENCE AND NETWORK SECURITY, 2011, 11 (12): : 142 - 150
  • [49] Silicon Carbide Power Devices: Progress and Future Outlook
    Baliga, B. Jayant
    IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2023, 11 (03) : 2400 - 2411
  • [50] Power Devices in Polish National Silicon Carbide Program
    Sochacki, Mariusz
    Kubiak, Andrzej
    Lisik, Zbigniew
    Szmidt, Jan
    2008 13TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE, VOLS 1-5, 2008, : 2452 - +
12345