Comparison of the Power Cycling Performance of Silicon and Silicon Carbide Power Devices in a Baseplate Less Module Package at Different Temperature Swings

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University of Bremen, Institute for Electrical Drives Power Electronics, and Devices, Bremen, Germany [1 ]
不详 [2 ]
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来源：
Proc. Int. Symp. Power Semicond. Dev. ICs | 1600年 / 175-178期
关键词：
Lifetime data - Lifetime models - Module packages - Package technologies - Power cycling - Silicon carbide MOSFETs - Silicon-carbide power devices - Temperature swings;
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