Tunable Intrinsic Spin Hall Conductivity in Two-Dimensional van der Waals Ferroelectric WTe2

被引:0
|
作者
Zhang, Peng [1 ]
Hu, Shunbo [1 ,2 ,3 ]
Gao, Heng [1 ]
Yao, Wenliang [1 ]
Li, Jie [4 ]
Wang, Yin [1 ]
Li, Musen [1 ]
Ren, Wei [1 ]
机构
[1] Shanghai Univ, Mat Genome Inst, Int Ctr Quantum & Mol Struct, Phys Dept, Shanghai 200444, Peoples R China
[2] Shanghai Univ, Inst Conservat Cultural Heritage, Sch Cultural Heritage & Informat Management, Shanghai 200444, Peoples R China
[3] Shanghai Univ, Key Lab Silicate Cultural Rel Conservat, Minist Educ, Shanghai 200444, Peoples R China
[4] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
spin Hall conductivity; spin-orbit coupling; sliding ferroelectricity; interlayer distance; interlayer sliding;
D O I
10.1021/acsaelm.4c01060
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We conducted a systematic study of the spin Hall conductivity (SHC) of bilayer WTe2 and investigated the effects of interlayer sliding and interlayer distance on the SHC. We discovered that while the SHC is robust against changes in interlayer sliding, it can be tuned by adjusting the distance between the layers. We found that the interlayer distance-dependent SHC arises from interlayer coupling, which determines the hybridization strength of W-d and Te-p orbitals and subsequently affects the SHC. Therefore, changing the distance between layers in bilayer WTe2 can effectively tune the SHC. These findings not only enhance our fundamental understanding of the SHC in bilayer WTe2 but also provide guidelines for the development of next-generation spintronic devices.
引用
收藏
页码:7791 / 7798
页数:8
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