High-quality temperature-complementary bulk acoustic wave resonators fabricated with strippable single-crystalline AlN films grown on sapphire

被引：0

作者：

Luo, Tianyou ^{[1
]}

Zhang, Yinuo ^{[1
]}

Chen, Zhipeng ^{[1
]}

Xu, Kaibin ^{[1
]}

Ouyang, Peidong ^{[1
]}

Hu, Han ^{[1
]}

Li, Chenyang ^{[1
]}

Zhu, Yuhan ^{[1
]}

Yi, Xinyan ^{[2
]}

Li, Guoqiang ^{[1
,2
,3
]}

机构：

[1] South China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Peoples R China

[2] Guangzhou FLCT Commun Technol Co Ltd, Guangzhou 510700, Peoples R China

[3] Shanxi Zheda Inst Adv Mat & Chem Engn, Taiyuan 030032, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2024年 / 125卷 / 21期

关键词：

THICKNESS; EPILAYER; LAYER;

D O I：

10.1063/5.0231483

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To satisfy the strict demands of 5G radio frequency communication, we propose high-quality, flexible temperature-compensated single-crystalline AlN film bulk acoustic wave resonators (TC-SABARs) based on a 6-inch sapphire substrate. An AlGaN sacrificial layer and a 600-nm-thick single-crystalline AlN epitaxial layer are deposited on a sapphire substrate by metal organic chemical vapor deposition (MOCVD). Two types of TC-SABARs are fabricated and their performances are compared with published results. The results indicate that one of the TC-SABARs has a maximum Bode Q of 3406, an effective coefficient ( K-eff(2)) of 6.21%, and a temperature coefficient of frequency (TCF) of -9.5 ppm/degrees C. The other TC-SABAR exhibits a maximum Bode Q of 3022, a K-eff(2) of 5.99%, and a TCF of +0.7 ppm/degrees C. This performance can be attributed to the high-quality single-crystalline AlN film and the temperature-compensation structure with nonmetallic flip-chip bonding film transfer process and a thick SiO2 layer.

引用

页数：9