Nanopetal-Assembled SnS Flower-Based Vis-NIR Photodetector

被引：0
|
作者：
Gupta, Prashant Kumar [1 ]
Goswami, Yashwant Puri [1 ]
Pandey, Amritanshu [1 ]
机构：
[1] Banaras Hindu Univ, Indian Inst Technol, Dept Elect Engn, Varanasi 221005, India
来源：
ACS APPLIED ELECTRONIC MATERIALS | 2024年 / 6卷 / 10期
关键词：
2D nanopetals; 3D SnS flowers; heterojunction; photodetector; vis-NIR; NANOFLOWERS;
D O I：
10.1021/acsaelm.4c01133
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports a simple, low-cost, and high-performance two-dimensional (2D) nanopetal-assembled three-dimensional (3D) SnS flowers/Si heterojunction-based visible-near-infrared (vis-NIR) photodetector (PD). A modified chemical bath deposition (CBD) method was used to grow a uniform and closely spaced array of SnS flowers on a Si substrate. This type of nanostructure offers a large photoactive area, thus generating a large number of carriers. The high-performance parameters of the fabricated PD (responsivity, 68.21 A/W; external quantum efficiency (EQE), 1.32 x 10(4)%; detectivity, 6.87 x 10(13) Jones; rise time, 193.91 ms; and fall time, 94.19 ms at 635 nm) are attributed to the heterojunction characteristics resulting from closely spaced nanopetal-assembled SnS flowers on silicon.
引用
收藏
页码：7215 / 7221
页数：7
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