Nanopetal-Assembled SnS Flower-Based Vis-NIR Photodetector

被引：0

作者：

Gupta, Prashant Kumar ^{[1
]}

Goswami, Yashwant Puri ^{[1
]}

Pandey, Amritanshu ^{[1
]}

机构：

[1] Banaras Hindu Univ, Indian Inst Technol, Dept Elect Engn, Varanasi 221005, India

来源：

ACS APPLIED ELECTRONIC MATERIALS | 2024年 / 6卷 / 10期

关键词：

2D nanopetals; 3D SnS flowers; heterojunction; photodetector; vis-NIR; NANOFLOWERS;

D O I：

10.1021/acsaelm.4c01133

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports a simple, low-cost, and high-performance two-dimensional (2D) nanopetal-assembled three-dimensional (3D) SnS flowers/Si heterojunction-based visible-near-infrared (vis-NIR) photodetector (PD). A modified chemical bath deposition (CBD) method was used to grow a uniform and closely spaced array of SnS flowers on a Si substrate. This type of nanostructure offers a large photoactive area, thus generating a large number of carriers. The high-performance parameters of the fabricated PD (responsivity, 68.21 A/W; external quantum efficiency (EQE), 1.32 x 10(4)%; detectivity, 6.87 x 10(13) Jones; rise time, 193.91 ms; and fall time, 94.19 ms at 635 nm) are attributed to the heterojunction characteristics resulting from closely spaced nanopetal-assembled SnS flowers on silicon.

引用

页码：7215 / 7221

页数：7

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