Generation-recombination voltage noise spectrum in uniformly doped majority-carrier semiconductor samples

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[1] Park, Chan Hyeong

[2] Chung, In-Young

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| 2018年 / American Institute of Physics Inc.卷 / 124期

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[31] Generation-recombination noise in doped-channel Al0.3Ga0.7As/GaAs/In0.2Ga0.8As quantum well micro-Hall devices
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Kissel, H
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JOURNAL OF APPLIED PHYSICS, 2003, 94 (12) : 7590 - 7593
[32] Generation-recombination noise in doped-channel Al0.3Ga 0.7As/GaAs/In0.2Ga0.8As quantum well micro-Hall devices
Masselink, W.T. (massel@physik.hu-berlin.de), 1600, American Institute of Physics Inc. (94):
[33] Two-dimensional semiconductor device simulation of trap-assisted generation-recombination noise under periodic large-signal conditions and its use for developing cyclostationary circuit simulation models
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