Generation-recombination voltage noise spectrum in uniformly doped majority-carrier semiconductor samples

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[1] Park, Chan Hyeong

[2] Chung, In-Young

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| 2018年 / American Institute of Physics Inc.卷 / 124期

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共 33 条

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APPLIED PHYSICS LETTERS, 2003, 82 (07) : 1063 - 1065
[29] GENERATION-RECOMBINATION NOISE OF NI-DOPED GE IN TEMPERATURE RANGE 350 DEGREES -100 DEGREES K AND CAPTURE CROSS-SECTIONS OF NI IN GE
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[30] Generation-recombination noise in pseudomorphic modulation-doped Al0.2Ga0.8As/In0.1Ga0.9As/GaAs micro-Hall devices
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