Generation-recombination voltage noise spectrum in uniformly doped majority-carrier semiconductor samples

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[1] Park, Chan Hyeong

[2] Chung, In-Young

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| 2018年 / American Institute of Physics Inc.卷 / 124期

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共 33 条

[1] Generation-recombination voltage noise spectrum in uniformly doped majority-carrier semiconductor samples
Park, Chan Hyeong
Chung, In-Young
JOURNAL OF APPLIED PHYSICS, 2018, 124 (16)
[2] Generation-recombination noise in uniformly doped semiconductors with contacts of finite surface recombination velocities
Park, Chan Hyeong
JOURNAL OF APPLIED PHYSICS, 2022, 132 (21)
[3] GENERATION-RECOMBINATION NOISE IN AN IMPURITY SEMICONDUCTOR
TEITLERS
JOURNAL OF APPLIED PHYSICS, 1963, 34 (09) : 2751 - &
[4] GENERATION-RECOMBINATION NOISE OF A 3-LEVEL SEMICONDUCTOR
KLEINPENNING, GM
PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (04): : 1861 - +
[5] GENERATION-RECOMBINATION NOISE IN SILICON DOPED WITH BORON AND INDIUM
PROKLOV, VV
GODIK, EE
POKROVSK.YE
SOVIET PHYSICS SOLID STATE,USSR, 1965, 7 (01): : 263 - +
[6] OBSERVATION OF IDEAL GENERATION-RECOMBINATION NOISE SPECTRUM AND SPECTRA WITH VOLTAGE BARIABLE RELAXATION TIME IN GOLD-DOPED SILICON
SAH, CT
YAU, LD
APPLIED PHYSICS LETTERS, 1969, 14 (09) : 267 - +
[7] GENERATION-RECOMBINATION NOISE IN SUBMICRON SEMICONDUCTOR LAYERS - INFLUENCE OF THE EDGES
KLEINPENNING, TGM
JARRIX, S
LECOY, G
JOURNAL OF APPLIED PHYSICS, 1995, 78 (04) : 2883 - 2885
[8] GENERATION-RECOMBINATION NOISE DURING INJECTION BREAKDOWN OF A COMPENSATED SEMICONDUCTOR
BLOKHIN, IK
OSIPOV, VV
KHOLODNOV, VA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (11): : 1222 - 1226
[9] GENERATION-RECOMBINATION NOISE IN A 2-LEVEL IMPURITY SEMICONDUCTOR
TEITLER, S
JOURNAL OF APPLIED PHYSICS, 1958, 29 (11) : 1585 - 1587
[10] 1/f NOISE IN EXTRINSIC SEMICONDUCTOR MATERIALS INTERPRETED AS MODULATED GENERATION-RECOMBINATION NOISE
Grueneis, Ferdinand
FLUCTUATION AND NOISE LETTERS, 2010, 9 (02): : 229 - 243

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