Two dimensional numerical modeling and simulation of a uniformly doped GaAs MESFET photodetector

被引：3
|
作者：
Balasubadra, K. [1 ]
Arulmary, A. [1 ]
Rajamani, V. [2 ]
Sankaranarayanan, K. [3 ]
机构：
[1] K.L.N.College of Information Technique, Department of Electronics and Communication Engineering, Sivagangai, TN 630 511, India
[2] PSNA College of Engineering and Techology, Department of Electronics and Communication Engineering, Dindlgul, TN 624 622, India
[3] V.L.B. Janaklammal Engineering College, Department of Electronics and Communication Engineering, Coimbatore, TN 641 042, India
来源：
Journal of Optical Communications | 2008年 / 29卷 / 04期
关键词：
19;
D O I：
10.1515/JOC.2008.29.4.194
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：194 / 201
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