Two dimensional numerical modeling and simulation of a uniformly doped GaAs MESFET photodetector

被引：3

作者：

Balasubadra, K. ^{[1
]}

Arulmary, A. ^{[1
]}

Rajamani, V. ^{[2
]}

Sankaranarayanan, K. ^{[3
]}

机构：

[1] K.L.N.College of Information Technique, Department of Electronics and Communication Engineering, Sivagangai, TN 630 511, India

[2] PSNA College of Engineering and Techology, Department of Electronics and Communication Engineering, Dindlgul, TN 624 622, India

[3] V.L.B. Janaklammal Engineering College, Department of Electronics and Communication Engineering, Coimbatore, TN 641 042, India

来源：

Journal of Optical Communications | 2008年 / 29卷 / 04期

关键词：

19;

D O I：

10.1515/JOC.2008.29.4.194

中图分类号：

学科分类号：

摘要：

引用

页码：194 / 201

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