Characterization of SiC MOS structures using conductance spectroscopy and capacitance voltage analysis

被引：0
|
作者：
Sveinbjörnsson, E.O?. [1 ]
Ahnoff, M. [1 ]
Ólafsson, H.O?. [1 ]
机构：
[1] Microtechnology Ctr. Chalmers S., Chalmers University of Technology, Department of Microelectronics, SE-412 96 Göteborg, Sweden
来源：
Materials Science Forum | 2000年 / 338卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Characterization of SIC MOS structures using conductance spectroscopy and capacitance voltage analysis
    Sveinbjörnsson, EÖ
    Ahnoff, M
    Olafsson, HÖ
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1117 - 1120
  • [2] Characterization of MOS-SOI structures by means of capacitance-voltage measurement analysis
    Zareba, A
    Beck, RB
    Ikraiam, F
    Jakubowski, A
    PROCEEDINGS OF THE EIGHTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES, 1997, 97 (23): : 197 - 202
  • [3] Heterointerface properties of diamond MOS structures studied using capacitance-voltage and conductance-frequency measurements
    Saha, Niloy Chandra
    Kasu, Makoto
    DIAMOND AND RELATED MATERIALS, 2019, 91 : 219 - 224
  • [4] Effect of oxide thickness on the capacitance and conductance characteristics of MOS structures
    Tugluoglu, N.
    Karadeniz, S.
    Selçuk, A. Birkan
    Ocak, S. Bilge
    PHYSICA B-CONDENSED MATTER, 2007, 400 (1-2) : 168 - 174
  • [5] Capacitance measurements on SiC MOS structures for the determination of interface properties
    Sadeghi, M
    Engstrom, O
    MICROELECTRONIC ENGINEERING, 1997, 36 (1-4) : 183 - 186
  • [6] CAPACITANCE-VOLTAGE AND CURRENT-VOLTAGE CHARACTERISTICS OF TUNNEL MOS STRUCTURES
    DUBEY, PK
    FILIKOV, VA
    SIMMONS, JG
    THIN SOLID FILMS, 1976, 33 (01) : 49 - 63
  • [7] Capacitance voltage characterization of fully silicided gated MOS capacitor
    Wang Baomin
    Ru Guoping
    Jiang Yulong
    Qu Xinping
    Li Bingzong
    Liu Ran
    JOURNAL OF SEMICONDUCTORS, 2009, 30 (03)
  • [8] MODELING OF HYDROGENATED AMORPHOUS-SILICON SCHOTTKY STRUCTURES USING CAPACITANCE-VOLTAGE AND CONDUCTANCE-VOLTAGE MEASUREMENTS
    LAHRI, R
    HAN, MK
    ANDERSON, WA
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) : 928 - 931
  • [9] TEMPERATURE-DEPENDENCE OF CAPACITANCE VOLTAGE CHARACTERISTICS IN IMPLANTED MOS STRUCTURES
    LYSENKO, VS
    LITOVSKII, RN
    NAZAROV, AN
    KULICHKOV, VP
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1982, 70 (02): : 719 - 728
  • [10] INFLUENCE OF CHARGE INTERACTIONS ON CAPACITANCE VERSUS VOLTAGE CURVES IN MOS STRUCTURES
    WHELAN, MV
    PHILIPS RESEARCH REPORTS, 1965, 20 (05): : 562 - +
12345