Deposition of MSe (M = Cd, Zn) films by LP-MOCVD from novel single-source precursors M[(SePPh2)2N]2

被引：0

作者：

Afzaal, Mohammad ^{[1
]}

Aucott, Stephen M. ^{[1
]}

Crouch, David ^{[1
]}

O'Brien, Paul ^{[1
]}

Woollins, J. Derek ^{[1
]}

Park, Jin-Ho ^{[1
]}

机构：

[1] Manchester Materials Science Ctr., Department of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, United Kingdom

来源：

Advanced Materials | 2002年 / 14卷 / 17期

关键词：

Glass - Polycrystalline materials - Scanning electron microscopy - Semiconducting cadmium compounds - Semiconducting zinc compounds - Stoichiometry - Thermogravimetric analysis - Thin films - X ray powder diffraction;

D O I：

10.1002/1521-4095(20020205)14:33.0.CO;2-O

中图分类号：

学科分类号：

摘要：

Communication: CdSe and ZnSe films have been deposited from novel single-source precursors M[(SePPh2)2N]2 (M = Cd or Zn) by LP-MOCVD. The precursors are air stable and start to evaporate at 375 °C. The CdSe and ZnSe films deposited on glass are polycrystalline and of hexagonal phase. Scanning electron microscopy reveals dense films (see Figure) and energy dispersive X-ray analysis indicates that the stoichiometry of the deposited films is close to 1:1.

引用

页码：187 / 189

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