Etching selectivity and surface profile of GaN in the Ni, SiO2 and photoresist masks using an inductively coupled plasma

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[1] Chang, L.-B.
[2] Liu, S.-S.
[3] Jeng, M.-J.
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Chang, L.-B. | 2001年 / Japan Society of Applied Physics卷 / 40期
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10.1143/jjap.40.1242
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