Etching selectivity and surface profile of GaN in the Ni, SiO2 and photoresist masks using an inductively coupled plasma

被引：0
|
作者：
机构：
[1] Chang, L.-B.
[2] Liu, S.-S.
[3] Jeng, M.-J.
来源：
Chang, L.-B. | 2001年 / Japan Society of Applied Physics卷 / 40期
关键词：
D O I：
10.1143/jjap.40.1242
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] High rate and highly selective SiO2 etching employing inductively coupled plasma
    Fukasawa, Takayuki
    Nakamura, Akihiro
    Shindo, Haruo
    Horiike, Yasuhiro
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1994, 33 (4 B): : 2139 - 2144
  • [22] BCl3/Cl2-Based Inductively Coupled Plasma Etching of GaN/AlGaN Using Photoresist Mask
    Rawal, D. S.
    Malik, Hitendra K.
    Agarwal, Vanita R.
    Kapoor, Ashok Kumar
    Sehgal, B. K.
    Muralidharan, R.
    IEEE TRANSACTIONS ON PLASMA SCIENCE, 2012, 40 (09) : 2211 - 2220
  • [23] Deep GaN etching by inductively coupled plasma and induced surface defects
    Ladroue, J.
    Meritan, A.
    Boufnichel, M.
    Lefaucheux, P.
    Ranson, P.
    Dussart, R.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2010, 28 (05): : 1226 - 1233
  • [24] High etch selectivity for plasma etching SiO2 with AlN and Al2O3 masks
    Kolari, K.
    MICROELECTRONIC ENGINEERING, 2008, 85 (5-6) : 985 - 987
  • [25] Highly selective SiO2 etching in low-electron-temperature inductively coupled plasma
    Bai, K. H.
    Chang, H. Y.
    Kwon, G. C.
    Kim, H. S.
    Kim, J. S.
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (6A): : 3602 - 3604
  • [26] Inductively coupled plasma etching of GaN using Cl2/He gases
    Lin, YC
    Chang, SJ
    Su, YK
    Shei, SC
    Hsu, SJ
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 98 (01): : 60 - 64
  • [27] Etch characteristics of GaN using inductively coupled Cl2 plasma etching
    Rosli, Siti Azlina
    Aziz, A. Abdul
    CURRENT ISSUES OF PHYSICS IN MALAYSIA, 2008, 1017 : 353 - 357
  • [28] SiO2 and Si etching in fluorocarbon plasmas: A detailed surface model coupled with a complete plasma and profile simulator
    Gogolides, E.
    Vauvert, P.
    Courtin, Y.
    Kokkoris, G.
    Pelle, R.
    Boudouvis, A.
    Turban, G.
    Microelectronic Engineering, 1999, 46 (01): : 311 - 314
  • [29] A review of SiO2 etching studies in inductively coupled fluorocarbon plasmas
    Schaepkens, M
    Oehrlein, GS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (03) : C211 - C221
  • [30] PROFILE CONTROL IN PLASMA-ETCHING OF SIO2
    CASTELLANO, RN
    SOLID STATE TECHNOLOGY, 1984, 27 (05) : 203 - 206
12345