Study of Si and Ge growth on Si(100) surface

被引：0

作者：

Wang, Lei ^{[1
]}

Tang, Jingchang ^{[1
]}

Yang, Deren ^{[1
]}

Wang, Xuesen ^{[1
]}

Hu, Yanfang ^{[1
]}

机构：

[1] Lab. of Silicon Mat., Dept. of Phys., Zhejiang Univ., Hangzhou 310027, China

来源：

Zhenkong Kexue yu Jishu Xuebao/Vacuum Science and Technology | 2002年 / 22卷 / 02期

关键词：

Germanium - Scanning tunneling microscopy - Silicon - Surface structure;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Utilizing scanning tunneling microscope and UHV system, the growth of Si and Ge on Si(100) surface have been investigated. The morphological and structural properties of the surfaces are studies. A nano-patterned Si film can be produced by homoepitaxy on Si(100). The growth of Ge on Si(100) will form regular 3D islands. On the multilayer film of Si/Ge/Si(100), the Ge will form regular small and big is lands. The big islands are probably stabilized by a Ge/Si/Ge shell structure.

引用

页码：104 / 106

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