Study of Si and Ge growth on Si(100) surface

被引：0

作者：

Wang, Lei ^{[1
]}

Tang, Jingchang ^{[1
]}

Yang, Deren ^{[1
]}

Wang, Xuesen ^{[1
]}

Hu, Yanfang ^{[1
]}

机构：

[1] Lab. of Silicon Mat., Dept. of Phys., Zhejiang Univ., Hangzhou 310027, China

来源：

Zhenkong Kexue yu Jishu Xuebao/Vacuum Science and Technology | 2002年 / 22卷 / 02期

关键词：

Germanium - Scanning tunneling microscopy - Silicon - Surface structure;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Utilizing scanning tunneling microscope and UHV system, the growth of Si and Ge on Si(100) surface have been investigated. The morphological and structural properties of the surfaces are studies. A nano-patterned Si film can be produced by homoepitaxy on Si(100). The growth of Ge on Si(100) will form regular 3D islands. On the multilayer film of Si/Ge/Si(100), the Ge will form regular small and big is lands. The big islands are probably stabilized by a Ge/Si/Ge shell structure.

引用

页码：104 / 106

共 50 条

[11] Investigation of Ge film growth on the Si(100) surface by recording diffractometry
Nikiforov, AI
Cherepanov, VA
Pchelyakov, OP
SEMICONDUCTORS, 2001, 35 (09) : 988 - 991
[12] Investigation of Ge film growth on the Si(100) surface by recording diffractometry
A. I. Nikiforov
V. A. Cherepanov
O. P. Pchelyakov
Semiconductors, 2001, 35 : 988 - 991
[13] Electronically enhanced surface diffusion during Ge growth on Si(100)
Er, Ali Oguz
Elsayed-Ali, Hani E.
JOURNAL OF APPLIED PHYSICS, 2011, 109 (08)
[14] Surface reconstructions of the Si(100)-Ge system
Kahng, SJ
Park, JY
Kuk, Y
SURFACE SCIENCE, 1999, 440 (03) : 351 - 356
[15] HETEROEPITAXY OF GE FILMS ON SI(100) SURFACE
TATSUYAMA, C
UEBA, H
KATAOKA, Y
APPLIED SURFACE SCIENCE, 1988, 33-4 : 457 - 464
[16] SI/GE STRAINED-LAYER SUPERLATTICES ON SI(100), GE/SI(100) AND SI1-XGEX/SI(100)
OSPELT, M
BACSA, W
HENZ, J
MADER, KA
VONKANEL, H
SUPERLATTICES AND MICROSTRUCTURES, 1988, 5 (01) : 71 - 77
[17] GROWTH OF ABRUPT GE LAYERS IN SI (100)
IYER, SS
PUKITE, PR
TSANG, JC
COPEL, MW
JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 439 - 443
[18] GROWTH AND CHARACTERIZATION OF SI-GE MULTILAYER STRUCTURES ON SI(100)
BARIBEAU, JM
LOCKWOOD, DJ
DHARMAWARDANA, MWC
AERS, GC
HOUGHTON, DC
HETEROSTRUCTURES ON SILICON : ONE STEP FURTHER WITH SILICON, 1989, 160 : 145 - 152
[19] Optical study of potassium growth on the Si(100) surface
Roy, M
Borensztein, Y
APPLIED SURFACE SCIENCE, 1996, 104 : 147 - 151
[20] Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands
M. Yu. Esin
A. I. Nikiforov
V. A. Timofeev
A. R. Tuktamyshev
V. I. Mashanov
I. D. Loshkarev
A. S. Deryabin
O. P. Pchelyakov
Semiconductors, 2018, 52 : 390 - 393

← 1 2 3 4 5 →