Ultrashallow junction formation using novel plasma doping technology beyond 50 nm MOS devices

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作者：
Nano Electronic Device Team, Future Technology Research Division, Electronics and Telecommunications Research Institute, 161, Gajeong-dong, Yuseong-gu, Daejon 305-360, Korea, Republic of [1 ]
不详 [2 ]
不详 [3 ]
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Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 4 B卷 / 2376-2379期
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摘要：
Activation energy - Annealing - CMOS integrated circuits - Dielectric materials - Doping (additives) - Gates (transistor) - MOSFET devices - Plasma applications - Silicon on insulator technology - Silicon wafers
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