Epitaxial growth of Al-doped β-FeSi2 on Si by ion beam synthesis

被引:0
|
作者
机构
[1] Maeda, Yoshihito
[2] Terai, Yoshikazu
[3] Itakura, Masaru
来源
Maeda, Y. (ymaeda@vega.energy.kyoto-u.ac.jp) | 1600年 / Japan Society of Applied Physics卷 / 44期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Rapid thermal annealing of ion beam synthesized β-FeSi2 nanoparticles in Si
    Sun, C. M.
    Tsang, H. K.
    Wong, S. P.
    Cheung, W. Y.
    Ke, N.
    Hark, S. K.
    APPLIED PHYSICS LETTERS, 2008, 92 (21)
  • [32] ION-BEAM SYNTHESIS OF BURIED FESI2 IN (100) SILICON
    PANKNIN, D
    WIESER, E
    GROETZSCHEL, R
    SKORUPA, W
    BAITHER, D
    BARTSCH, H
    QUERNER, G
    DANZIG, A
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 12 (1-2): : 119 - 122
  • [33] ION-BEAM-INDUCED SIMULTANEOUS EPITAXIAL-GROWTH OF ALPHA AND CUBIC FESI2 IN SI(100) AT 320-DEGREES-C
    DESIMONI, J
    BEHAR, M
    BERNAS, H
    LIN, XW
    LILIENTALWEBER, Z
    WASHBURN, J
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 755 - 758
  • [34] Mössbauer Optimization of the Direct Synthesis of β-FeSi2 by Ion Beam Mixing of Fe/Si Bilayers
    P. Schaaf
    M. Milosavljevic
    S. Dhar
    N. Bibic
    K.-P. Lieb
    M. Wölz
    G. Principi
    Hyperfine Interactions, 2002, 139-140 : 615 - 621
  • [35] MBE growth of β-FeSi2 epitaxial film on hydrogen terminated Si (111) substrate
    Ji, SY
    Lalev, GM
    Wang, JF
    Lim, JW
    Yoo, JH
    Shindo, D
    Isshiki, M
    JOURNAL OF CRYSTAL GROWTH, 2005, 285 (1-2) : 284 - 294
  • [36] A NEW METASTABLE EPITAXIAL SILICIDE - FESI2/SI(111)
    DEPARGA, ALV
    DELAFIGUERA, J
    OCAL, C
    MIRANDA, R
    ULTRAMICROSCOPY, 1992, 42 : 845 - 850
  • [37] The effect of ion implantation energy and dosage on the microstructure of the ion beam synthesized FeSi2 in Si
    Chong, YT
    Li, Q
    Chow, CF
    Ke, N
    Cheung, WY
    Wong, SP
    Homewood, KP
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 124 : 444 - 448
  • [38] Growth of β-FeSi2 thin films on β-FeSi2 (110) substrates by molecular beam epitaxy
    Muroga, M.
    Suzuki, H.
    Udono, H.
    Kikuma, I.
    Zhuravlev, A.
    Yamaguchib, K.
    Yamamoto, H.
    Terai, T.
    THIN SOLID FILMS, 2007, 515 (22) : 8197 - 8200
  • [39] On the crystallographic characteristics of ion beam synthesised β-FeSi2
    Shao, G
    Homewood, KP
    INTERMETALLICS, 2000, 8 (12) : 1405 - 1412
  • [40] Structural investigations of ion beam synthesized β-FeSi2
    Angelov, Ch.
    Amov, Bl.
    Mikli, V.
    Traksmaa, R.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2009, 11 (10): : 1490 - 1493