Epitaxial growth of Al-doped β-FeSi2 on Si by ion beam synthesis

被引：0
|
作者：
机构：
[1] Maeda, Yoshihito
[2] Terai, Yoshikazu
[3] Itakura, Masaru
来源：
Maeda, Y. (ymaeda@vega.energy.kyoto-u.ac.jp) | 1600年 / Japan Society of Applied Physics卷 / 44期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Growth condition dependence of Ge-doped β-FeSi2 epitaxial film by molecular beam epitaxy
    Noda, Keiichi
    Terai, Yoshikazu
    Fujiwara, Yasufumi
    JOURNAL OF CRYSTAL GROWTH, 2013, 378 : 376 - 380
  • [22] Ion beam synthesis of β-FeSi2 as an IR photosensitive material
    Maeda, Y
    Akita, T
    Umezawa, K
    Miyake, K
    Sagawa, M
    OPTOELECTRONIC MATERIALS AND DEVICES, 1998, 3419 : 354 - 360
  • [23] Ion beam synthesis of buried FeSi2 in (100) silicon
    Panknin, D.
    Wieser, E.
    Groetzchel, R.
    Skorupa, W.
    Baither, D.
    Bartsch, H.
    Querner, G.
    Danzig, A.
    Materials science & engineering. B, Solid-state materials for advanced technology, 1992, B12 (1-2): : 119 - 122
  • [24] Mossbauer optimization of the direct synthesis of β-FeSi2 by ion beam mixing of Fe/Si bilayers
    Schaaf, P
    Milosavljevic, M
    Dhar, S
    Bibic, N
    Lieb, KP
    Wölz, M
    Principi, G
    HYPERFINE INTERACTIONS, 2002, 139 (1-4): : 615 - 621
  • [25] LOW-TEMPERATURE ION-INDUCED EPITAXIAL-GROWTH OF ALPHA-FESI2 AND CUBIC FESI2 IN SI
    LIN, XW
    BEHAR, M
    DESIMONI, J
    BERNAS, H
    WASHBURN, J
    LILIENTALWEBER, Z
    APPLIED PHYSICS LETTERS, 1993, 63 (01) : 105 - 107
  • [26] Epitaxial Growth of Luminescent β-FeSi2 on modified Si(111) Surface by Silver
    Akiyama, Kensuke
    Funakubo, Hiroshi
    SMART PHOTONIC AND OPTOELECTRONIC INTEGRATED CIRCUITS XVII, 2015, 9366
  • [27] Radiation enhanced diffusion of ion implanted Fe in Si(100) observed in ion beam synthesis of β-FeSi2
    Maeda, Y
    Fujita, T
    Umezawa, K
    Miyake, K
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1997, 1997, (157): : 511 - 514
  • [28] Optical characterization of β-FeSi2 layers formed by ion beam synthesis
    Ayache, R
    Bouabellou, A
    Richter, E
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2004, 7 (4-6) : 463 - 466
  • [29] Photoluminescence properties of ion-beam-synthesized β-FeSi2 nanocrystals in Si
    Nakajima, T.
    Ichikawa, T.
    Matsukura, B.
    Maeda, Y.
    ASIAN SCHOOL-CONFERENCE ON PHYSICS AND TECHNOLOGY OF NANOSTRUCTURED MATERIALS, 2012, 23 : 25 - 28
  • [30] ION-BEAM SYNTHESIS OF ALPHA AND BETA FESI2 LAYERS
    HUNT, TD
    SEALY, BJ
    REESON, KJ
    GWILLIAM, RM
    HOMEWOOD, KP
    WILSON, RJ
    MEEKISON, CD
    BOOKER, GR
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 74 (1-2): : 60 - 64
12345