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Fabrication of heterostructured α-Fe2O3 / ZnO film for photoelectrode by aqueous solution process
被引:0
|作者:
Hong, J.S.
[1
]
Watanabe, T.
[1
]
Wagata, H.
[2
]
Katsumata, K.
[1
]
Okada, K.
[1
]
Matsushita, N.
[1
]
机构:
[1] Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama,226-8503, Japan
[2] Department of Environmental Science and Technology, Shinshu University, Nagano,380-8533, Japan
来源:
关键词:
Double-layered films - Glass substrates - Heterostructured films - High transmittance - Low resistivity - Photoelectrode - Solution process - Visible range;
D O I:
10.2497/jjspm.61.S324
中图分类号:
学科分类号:
摘要:
Heterostructured α-Fe2O3 / ZnO films were fabricated by using spin-spray method and properties of each layer and heterostructured α-Fe2O3 / ZnO film were investigated. First, as-deposited ZnO layer on glass substrate exhibited high transmittance of above 80 % in visible range and a low resistivity of 1.8 × 10-2 Ω;·cm. The formation of α-Fe2O3 layer on glass substrate was confirmed by XRD. This α-Fe2O3 layer was successively deposited on ZnO layer and it was confirmed that heterostructured α-Fe2O3 / ZnO double layered films could be fabricated by aqueous solution process. © 2014, Journal of the Japan Society of Powder and Powder Metallurgy. All rights reserved.
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