Fabrication of heterostructured α-Fe2O3 / ZnO film for photoelectrode by aqueous solution process

被引:0
|
作者
Hong, J.S. [1 ]
Watanabe, T. [1 ]
Wagata, H. [2 ]
Katsumata, K. [1 ]
Okada, K. [1 ]
Matsushita, N. [1 ]
机构
[1] Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama,226-8503, Japan
[2] Department of Environmental Science and Technology, Shinshu University, Nagano,380-8533, Japan
关键词
Double-layered films - Glass substrates - Heterostructured films - High transmittance - Low resistivity - Photoelectrode - Solution process - Visible range;
D O I
10.2497/jjspm.61.S324
中图分类号
学科分类号
摘要
Heterostructured α-Fe2O3 / ZnO films were fabricated by using spin-spray method and properties of each layer and heterostructured α-Fe2O3 / ZnO film were investigated. First, as-deposited ZnO layer on glass substrate exhibited high transmittance of above 80 % in visible range and a low resistivity of 1.8 × 10-2 Ω;·cm. The formation of α-Fe2O3 layer on glass substrate was confirmed by XRD. This α-Fe2O3 layer was successively deposited on ZnO layer and it was confirmed that heterostructured α-Fe2O3 / ZnO double layered films could be fabricated by aqueous solution process. © 2014, Journal of the Japan Society of Powder and Powder Metallurgy. All rights reserved.
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