Metalorganic molecular beam epitaxy of (In)GaAsN with dimethylhydrazine

被引:0
|
作者
Jin, C. [1 ]
Nikishin, S.A. [1 ]
Kuchinskii, V.I. [1 ]
Temkin, H. [1 ]
Holtz, M. [2 ]
机构
[1] Department of Electrical Engineering, Texas Tech University, Lubbock, TX 79409, United States
[2] Department of Physics, Texas Tech University, Lubbock, TX 79409, United States
来源
| 1600年 / American Institute of Physics Inc.卷 / 91期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] SELECTIVE-AREA EPITAXY OF GASB AND ALGASB BY METALORGANIC MOLECULAR-BEAM EPITAXY
    LIU, XF
    ASAHI, H
    OKUNO, Y
    MARX, D
    INOUE, K
    GONDA, S
    JOURNAL OF CRYSTAL GROWTH, 1994, 136 (1-4) : 250 - 255
  • [42] ATOMIC LAYER EPITAXY OF ZNSE ON GAAS(100) BY METALORGANIC MOLECULAR-BEAM EPITAXY
    KIMURA, R
    KONAGAI, M
    TAKAHASHI, K
    JOURNAL OF CRYSTAL GROWTH, 1992, 116 (3-4) : 283 - 288
  • [43] ATOMIC LAYER EPITAXY OF ZNS ON GAAS SUBSTRATES BY METALORGANIC MOLECULAR-BEAM EPITAXY
    WU, YH
    TOYODA, T
    KAWAKAMI, Y
    FUJITA, S
    FUJITA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (05): : L727 - L730
  • [44] METALORGANIC MOLECULAR-BEAM EPITAXY OF GAAS AND ALGAAS USING BOTH METAL AND METALORGANIC SOURCES
    WATANABE, A
    HATA, M
    ISU, T
    KAMIJOH, T
    KATAYAMA, Y
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 223 - 228
  • [45] Metalorganic molecular beam epitaxy/etching of III-V semiconductors
    Gonda, S
    Asahi, H
    Yamamoto, K
    Hidaka, K
    Sato, J
    Tashima, T
    Asami, K
    APPLIED SURFACE SCIENCE, 1998, 130 : 377 - 381
  • [46] EFFECT OF PHOTOIRRADIATION ON THE GROWTH OF ZNSE IN METALORGANIC MOLECULAR-BEAM EPITAXY
    KAWAKAMI, Y
    TOYODA, T
    FUJITA, S
    FUJITA, S
    JOURNAL OF CRYSTAL GROWTH, 1994, 136 (1-4) : 371 - 375
  • [47] Er doping of AlN during growth by metalorganic molecular beam epitaxy
    MacKenzie, JD
    Abernathy, CR
    Pearton, SJ
    Hommerich, U
    Wu, X
    Schwartz, RN
    Wilson, RG
    Zavada, JM
    APPLIED PHYSICS LETTERS, 1996, 69 (14) : 2083 - 2085
  • [48] Growth of InP using TBP and DTBP in metalorganic molecular beam epitaxy
    Ritter, D
    Keidler, M
    Heinecke, H
    JOURNAL OF CRYSTAL GROWTH, 1998, 188 (1-4) : 152 - 158
  • [49] p-Type GaAs doped by diiodomethane (CI2H2) in molecular beam epitaxy, metalorganic molecular beam epitaxy, and chemical beam epitaxy
    Univ of California at San Diego, La Jolla, United States
    J Cryst Growth, 1 -4 pt 1 (246-250):
  • [50] Etching of GaSb with trisdimethylaminoantimony and triisopropylantimony in a metalorganic molecular beam epitaxy chamber
    Yamamoto, K
    Asahi, H
    Miki, K
    Gonda, S
    JOURNAL OF CRYSTAL GROWTH, 1997, 173 (1-2) : 21 - 26