Metalorganic molecular beam epitaxy of (In)GaAsN with dimethylhydrazine

被引:0
|
作者
Jin, C. [1 ]
Nikishin, S.A. [1 ]
Kuchinskii, V.I. [1 ]
Temkin, H. [1 ]
Holtz, M. [2 ]
机构
[1] Department of Electrical Engineering, Texas Tech University, Lubbock, TX 79409, United States
[2] Department of Physics, Texas Tech University, Lubbock, TX 79409, United States
来源
| 1600年 / American Institute of Physics Inc.卷 / 91期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy
    A. Yu. Egorov
    A. E. Zhukov
    A. R. Kovsh
    V. M. Ustinov
    V. V. Mamutin
    S. V. Ivanov
    V. N. Zhmerik
    A. F. Tsatsul’nikov
    D. A. Bedarev
    P. S. Kop’ev
    Technical Physics Letters, 1998, 24 : 942 - 944
  • [22] Thermodynamic analysis of the growth of GaAsN ternary compounds by molecular beam epitaxy
    V. A. Odnoblyudov
    A. R. Kovsh
    A. E. Zhukov
    N. A. Maleev
    E. S. Semenova
    V. M. Ustinov
    Semiconductors, 2001, 35 : 533 - 538
  • [23] GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy
    Egorov, AY
    Zhukov, AE
    Kovsh, AR
    Ustinov, VM
    Mamutin, VV
    Ivanov, SV
    Zhmerik, VN
    Tsatsul'nikov, AF
    Bedarev, DA
    Kop'ev, PS
    TECHNICAL PHYSICS LETTERS, 1998, 24 (12) : 942 - 944
  • [24] Study of optical properties of GaAsN layers prepared by molecular beam epitaxy
    Pulzara-Mora, A.
    Cruz-Hernandez, E.
    Rojas-Ramirez, J.
    Contreras-Guerrero, R.
    Melendez-Lira, M.
    Falcony-Guajardo, C.
    Aguilar-Frutis, M. A.
    Lopez-Lopez, M.
    JOURNAL OF CRYSTAL GROWTH, 2007, 301 (SPEC. ISS.) : 565 - 569
  • [25] Molecular-beam epitaxy growth of dilute GaAsN alloys by surface nitridation
    Urakami, Noriyuki
    Yamane, Keisuke
    Sekiguchi, Hiroto
    Okada, Hiroshi
    Wakahara, Akihiro
    JOURNAL OF CRYSTAL GROWTH, 2016, 435 : 19 - 23
  • [26] Metalorganic molecular beam epitaxy of InGaN layers and their optical properties
    Kim, MH
    Cho, JK
    Lee, IH
    Park, SJ
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1999, 176 (01): : 269 - 272
  • [27] Growth and characterization of HgCdTe heterostructures by metalorganic molecular beam epitaxy
    Parikh, A
    Pearson, SD
    Tran, TK
    Bicknell, RN
    Bent, RG
    Wagner, BK
    Schafer, P
    Summers, CJ
    JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) : 1152 - 1156
  • [28] METALORGANIC MOLECULAR-BEAM EPITAXY OF ALGAAS USING APAH
    KONIG, F
    MORSCH, G
    KAMP, M
    LUTH, H
    HOSTALEK, M
    POHL, L
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (10): : 4425 - 4429
  • [29] Metalorganic molecular beam epitaxy of GaNAs alloys on (001)GaAs
    Uesugi, K
    Suemune, I
    JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 490 - 495
  • [30] Growth of group III nitrides by metalorganic molecular beam epitaxy
    Abernathy, CR
    MacKenzie, JD
    Donovan, SM
    JOURNAL OF CRYSTAL GROWTH, 1997, 178 (1-2) : 74 - 86