Growth and electrical characterization of N-face AlGaN/GaN heterostructures

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ECE Department, University of California, Santa Barbara, CA 93106, United States [1 ]
不详 [2 ]
不详 [3 ]
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| 1600年 / L1478-L1480卷 / November 25, 2005期
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摘要：
Capacitance measurement - Electron mobility - Heterojunctions - High electron mobility transistors - Mass spectrometry - Molecular beam epitaxy - Semiconducting aluminum compounds - Semiconductor growth - Silicon carbide
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