Growth and electrical characterization of N-face AlGaN/GaN heterostructures

被引：0
|
作者：
ECE Department, University of California, Santa Barbara, CA 93106, United States [1 ]
不详 [2 ]
不详 [3 ]
机构：
来源：
| 1600年 / L1478-L1480卷 / November 25, 2005期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Capacitance measurement - Electron mobility - Heterojunctions - High electron mobility transistors - Mass spectrometry - Molecular beam epitaxy - Semiconducting aluminum compounds - Semiconductor growth - Silicon carbide
引用
收藏
相关论文
共 50 条
  • [31] Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures
    Helkman, S. (sten@ece.ucsb.edu), 1600, American Institute of Physics Inc. (93):
  • [32] Structural and electrical investigation of Al/Ti/TiN/Au based N-face n-GaN contact stack
    Fogarassy, Zsolt
    Wojcicka, Aleksandra
    Cora, Ildiko
    Racz, Adel Sarolta
    Grzanka, Szymon
    Dodony, Erzsebet
    Perlin, Piotr
    Borysiewicz, Michal A.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2024, 175
  • [33] Growth and characterization of AlGaN/GaN heterostructures on semi-insulating GaN epilayers by molecular beam epitaxy
    Mei, F.
    Fu, Q. M.
    Peng, T.
    Liu, C.
    Peng, M. Z.
    Zhou, J. M.
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (09)
  • [34] N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition
    Sun, Qian
    Cho, Yong Suk
    Kong, Bo Hyun
    Cho, Hyung Koun
    Ko, Tsung Shine
    Yerino, Christopher D.
    Lee, In-Hwan
    Han, Jung
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (10) : 2948 - 2952
  • [35] Effect of deuterium diffusion on the electrical properties of AlGaN/GaN heterostructures
    Arroyo, JM
    Barbé, M
    Jomard, F
    Ballutaud, D
    Chevallier, J
    Poisson, MA
    Delage, T
    Dua, C
    Cordier, Y
    Hugues, M
    Semond, F
    Natali, F
    Lorenzini, P
    Massies, J
    Semiconductor Defect Engineering-Materials, Synthetic Structures and Devices, 2005, 864 : 579 - 584
  • [36] Electrical characterization of isotype n-ZnO/n-GaN heterostructures
    Alivov, Yahya
    Bo, Xiao
    Qian, Fan
    Johnstone, Daniel
    Lopatiuk-Tirpak, Olena
    Chernyak, Leonid
    Litton, Cole
    Morkoc, Hadis
    ZINC OXIDE AND RELATED MATERIALS, 2007, 957 : 207 - +
  • [37] Study of fluorine bombardment on the electrical properties of AlGaN/GaN heterostructures
    Basu, Anirban
    Kumar, Vipan
    Adesida, Ilesanmi
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (06): : 2607 - 2610
  • [38] Quantum Capacitance in N-Polar GaN/AlGaN/GaN Heterostructures
    Park, Pil Sung
    Nath, Digbijoy N.
    Rajan, Siddharth
    IEEE ELECTRON DEVICE LETTERS, 2012, 33 (07) : 991 - 993
  • [39] Characterization and discrimination of AlGaN- and GaN-related deep levels in AlGaN/GaN heterostructures
    Armstrong, Andrew
    Chakraborty, Arpan
    Speck, James S.
    DenBaars, Steven P.
    Mishra, Umesh K.
    Ringel, Steven A.
    PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 223 - +
  • [40] Characterization of electrical properties of AlGaN/GaN heterostructures grown on vicinal substrates by rf-MBE
    Shen, X. Q.
    Furuta, K.
    Nakamura, N.
    Okumura, H.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 2007, 4 (07): : 2395 - +
12345