Growth and electrical characterization of N-face AlGaN/GaN heterostructures

被引：0
|
作者：
ECE Department, University of California, Santa Barbara, CA 93106, United States [1 ]
不详 [2 ]
不详 [3 ]
机构：
来源：
| 1600年 / L1478-L1480卷 / November 25, 2005期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Capacitance measurement - Electron mobility - Heterojunctions - High electron mobility transistors - Mass spectrometry - Molecular beam epitaxy - Semiconducting aluminum compounds - Semiconductor growth - Silicon carbide
引用
收藏
相关论文
共 50 条
  • [1] Growth and electrical characterization of N-face AlGaN/GaN heterostructures
    Rajan, S
    Wong, M
    Fu, Y
    Wu, F
    Speck, JS
    Mishra, UK
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (46-49): : L1478 - L1480
  • [2] Photoreflectance studies of (A1)Ga- and N-face AlGaN/GaN heterostructures
    Buchheim, C
    Winzer, AT
    Goldhahn, R
    Gobsch, G
    Ambacher, O
    Link, A
    Eickhoff, M
    Stutzmann, M
    THIN SOLID FILMS, 2004, 450 (01) : 155 - 158
  • [3] Growth and characterization of GaN/AlGaN heterostructures on GaN substrate templates
    Hubbard, Lance
    Dietz, Nikolaus
    Vernon, Mark
    Collazoc, Ramon
    Mita, Seiji
    Kirste, Ronny
    Sitar, Zlatko
    Woods, Vincent T.
    SIXTEENTH INTERNATIONAL CONFERENCE ON SOLID STATE LIGHTING AND LED-BASED ILLUMINATION SYSTEMS, 2017, 10378
  • [4] N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology
    Chung, Jinwook W.
    Piner, Edwin L.
    Palacios, Tomas
    IEEE ELECTRON DEVICE LETTERS, 2009, 30 (02) : 113 - 116
  • [5] The growth of N-face GaN by MOCVD: effect of Mg, Si, and In
    Tavernier, PR
    Margalith, T
    Williams, J
    Green, DS
    Keller, S
    DenBaars, SP
    Mishra, UK
    Nakamura, S
    Clarke, DR
    JOURNAL OF CRYSTAL GROWTH, 2004, 264 (1-3) : 150 - 158
  • [6] Nanoscale electrical characterization of graphene contacts to AlGaN/GaN heterostructures
    Fisichella, Gabriele
    Greco, Giuseppe
    Di Franco, Salvatore
    Roccaforte, Fabrizio
    Ravesi, Sebastiano
    Giannazzo, Filippo
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 11-12, 2014, 11 (11-12): : 1551 - 1555
  • [7] Extreme sensitivity of contact resistance to variations in the interfacial composition of Ti/Al-based contacts to N-face GaN/AlGaN heterostructures
    Abraham, Michael
    Weng, Xiaojun
    Choi, Won Hyuck
    Downey, Brian P.
    Mohney, Suzanne E.
    APPLIED PHYSICS LETTERS, 2012, 101 (24)
  • [8] Growth of Ga-face and N-face GaN films using ZnO substrates
    Hellman, ES
    Buchanan, DNE
    Wiesmann, D
    Brener, I
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1996, 1 (1-46): : U117 - U123
  • [9] Electrical characterization of an interface n-type conduction channel in cubic GaN/AlGaN heterostructures
    Zado, A.
    Tschumak, E.
    Lischka, K.
    As, D. J.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 1, 2010, 7 (01): : 52 - 55
  • [10] Growth of Ga-face and N-face GaN films using ZnO substrates
    Bell Laboratories, Lucent Technologies, United States
    MRS Internet J. Nitride Semicond. Res., (6d):
12345