Fabrication of 700V SiC-SIT with ultra-low on-resistance of 1.01mΩ-cm2

被引：0
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作者：
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan [1 ]
不详 [2 ]
机构：
来源：
Aixtron; Cree, Inc.; Dow Corning; et al; GE Global Research Center; II-VI, Inc. | 1600年 / 1219-1222卷 / 2006期
关键词：
Compendex;
D O I：
International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
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学科分类号：
摘要：
Current density - Electric breakdown - Energy gap - Epitaxial growth - Silicon carbide
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