Modeling of subthreshold characteristics of deep-submicrometer FD devices

被引：0

作者：

Cheng, Bin-Jie ^{[1
]}

Shao, Zhi-Biao ^{[1
]}

Tang, Tian-Tong ^{[1
]}

Shen, Wen-Zhen ^{[1
]}

Zhao, Wen-Kui ^{[1
]}

机构：

[1] Xi'an Jiaotong Univ., Xi'an 710049, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2001年 / 22卷 / 07期

关键词：

Leakage currents - Mathematical models - Semiconducting films - Semiconducting silicon compounds - Threshold voltage;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A third-order quasi-cubic silicon film potential function in the vertical direction is assumed for FD-SOI device, and the surface potential formula is obtained via solving the two-dimensional Poisson equation in the subthreshold region. The surface potential model in the deep-submicrometer FD device is presented by introducing some new parameters to describe the DIBL effect. Based on it, a drain current model in the subthreshold region is developed, which can predict the accurate sub-threshold drain current characteristics. The models are verified by comparing with the two-dimensional device simulator, MEDICI.

引用

页码：908 / 914

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