First-principles investigations of the energetics of He-defect cluster in FCC nickel
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作者:
Huang, Gui-Yang
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Sichuan Univ, Coll Phys, Chengdu 610065, Peoples R China
Sichuan Univ, Key Lab High Energy Dens Phys & Technol, Minist Educ, Chengdu 610065, Peoples R ChinaSichuan Univ, Coll Phys, Chengdu 610065, Peoples R China
Huang, Gui-Yang
[1
,2
]
Zhou, Yanyao
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Sichuan Univ, Coll Phys, Chengdu 610065, Peoples R China
Sichuan Univ, Key Lab High Energy Dens Phys & Technol, Minist Educ, Chengdu 610065, Peoples R ChinaSichuan Univ, Coll Phys, Chengdu 610065, Peoples R China
Zhou, Yanyao
[1
,2
]
Li, Yongchun
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Shenzhen Univ, Coll Phys & Optoelect Engn, Dept Nucl Sci & Technol, Shenzhen, 518060, Peoples R ChinaSichuan Univ, Coll Phys, Chengdu 610065, Peoples R China
Li, Yongchun
[3
]
Hu, Xunxiang
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Sichuan Univ, Coll Phys, Chengdu 610065, Peoples R China
Sichuan Univ, Key Lab High Energy Dens Phys & Technol, Minist Educ, Chengdu 610065, Peoples R ChinaSichuan Univ, Coll Phys, Chengdu 610065, Peoples R China
Hu, Xunxiang
[1
,2
]
机构:
[1] Sichuan Univ, Coll Phys, Chengdu 610065, Peoples R China
[2] Sichuan Univ, Key Lab High Energy Dens Phys & Technol, Minist Educ, Chengdu 610065, Peoples R China
[3] Shenzhen Univ, Coll Phys & Optoelect Engn, Dept Nucl Sci & Technol, Shenzhen, 518060, Peoples R China
We have done comprehensive first-principles calculations of He-vacancy-interstitial clusters in FCC nickel. The calculated total binding energy of V (n) (Ni vacancy cluster), I (n) (Ni interstitial cluster), He (n) (helium interstitial cluster), He V-n (helium interstitials in one vacancy), and He nV (2) (helium interstitials in one divacancy) cluster is reported. The total binding energy of a two Ni interstitial cluster is relatively large (1.07 eV), and the binding energy between a monovacancy and a vacancy cluster containing < 20 vacancies is relatively small ( < 0.8 eV). The dissociation/emission energy barrier of a Ni interstitial from a He (3) interstitial cluster (three helium interstitial clusters) and a He V-8 cluster (eight helium interstitials in one vacancy) is <= 1.06 and <= 1.32 eV, respectively. The diffusion activation energy of helium is 1.36 eV via a dissociative mechanism. Comparisons with reported experimental results of helium diffusion and helium desorption have been done to verify the calculation results. The relative stability of stacking fault tetrahedron and void has been investigated further based on quasi-harmonic phonon calculations directly to consider the temperature effects. The reported binding energy results can be used to build molecular simulation potentials or provide input parameters for the cluster dynamics or lattice Monte Carlo simulations of helium-defect cluster evolution.
机构:
College of Electronic Information and Optical Engineering, Nankai University
Municipal Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai UniversityCollege of Electronic Information and Optical Engineering, Nankai University
机构:
Chinese Acad Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China
Univ Sci & Technol China, Hefei 230026, Anhui, Peoples R ChinaChinese Acad Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China
Zhang Lianji
Hu Qingmiao
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Chinese Acad Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R ChinaChinese Acad Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China
Hu Qingmiao
Yang Rui
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Chinese Acad Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R ChinaChinese Acad Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China
机构:
Sun Yat Sen Univ, Sino French Inst Nucl Engn & Technol, Zhuhai 519082, Peoples R ChinaSun Yat Sen Univ, Sino French Inst Nucl Engn & Technol, Zhuhai 519082, Peoples R China
Hui, Jun
Zhang, Xiaoyong
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Cent South Univ, State Key Lab Powder Met, Changsha 410083, Peoples R ChinaSun Yat Sen Univ, Sino French Inst Nucl Engn & Technol, Zhuhai 519082, Peoples R China
Zhang, Xiaoyong
Yang, Guo
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Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R ChinaSun Yat Sen Univ, Sino French Inst Nucl Engn & Technol, Zhuhai 519082, Peoples R China
Yang, Guo
Liu, Tao
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Sun Yat Sen Univ, Sino French Inst Nucl Engn & Technol, Zhuhai 519082, Peoples R ChinaSun Yat Sen Univ, Sino French Inst Nucl Engn & Technol, Zhuhai 519082, Peoples R China