A first principles investigation of defect energetics and diffusion in actinide dioxides

被引:2
|
作者
Singh, Shilpa [1 ,4 ]
Sonvane, Yogesh [2 ]
Nekrasov, K. A. [3 ]
Kupryazhkin, A. Ya. [3 ]
Gajjar, P. N. [4 ]
Gupta, Sanjeev K. [1 ]
机构
[1] St Xaviers Coll, Dept Phys & Elect, Computat Mat & Nanosci Grp, Ahmadabad 380009, India
[2] Sardar Vallabhbhai Natl Inst Technol, Dept Appl Phys, Adv Mat Lab, Surat 395007, India
[3] Ural Fed Univ, Ekaterinburg 620002, Russia
[4] Gujarat Univ, Univ Sch Sci, Dept Phys, Ahmadabad 380009, India
基金
俄罗斯基础研究基金会;
关键词
Density functional theory; Binary oxides (actinide oxides); Point defects; Diffusion; ELASTIC BAND METHOD; POINT-DEFECTS; URANIUM-DIOXIDE; SELF-DIFFUSION; UO2; 1ST-PRINCIPLES; THO2; CONDUCTION; TRANSPORT; OXYGEN;
D O I
10.1016/j.jnucmat.2024.154901
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, we have studied the formation and migration of various neutral intrinsic defects in AnO2. The nonstoichiometric defects such as vacancy defect, interstitial defect, and antisite defect as well as stoichiometric defects such as Schottky defect and Frenkel pairs has been considered for investigation. The formation energies of point defects are much higher in ThO2 as compared to UO2 and PuO2. The binding energy of defect clusters indicate that formation of Frenkel pair and Schottky defect is favorable over individual defects in ThO2. In case of UO2 and PuO2, hyper-stoichiometric defects are more stable than hypo-stoichiometric defects. The results obtained in this work are in good agreement with experimental results.
引用
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页数:8
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