Latest advances and roadmap for in-plane and perpendicular STT-RAM

被引：0
|
作者：
Driskill-Smith A. [1 ]
Apalkov D. [1 ]
Nikitin V. [1 ]
Tang X. [1 ]
Watts S. [1 ]
Lottis D. [1 ]
Moon K. [1 ]
Khvalkovskiy A. [1 ]
Kawakami R. [1 ]
Luo X. [1 ]
Ong A. [1 ]
Chen E. [1 ]
Krounbi M. [1 ]
机构：
[1] Grandis, Inc., Milpitas, CA 95035
来源：
2011 3rd IEEE International Memory Workshop, IMW 2011 | 2011年
关键词：
D O I：
10.1109/IMW.2011.5873205
中图分类号：
学科分类号：
摘要：
[No abstract available]
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