Reliability of low-temperature poly-Si thin film transistors with lightly doped drain structures

被引：0
|
作者：
Furuta, Mamoru [1 ]
Uraoka, Yukiharu [1 ]
Fuyuki, Takashi [2 ]
机构：
[1] TMDTCL, 1-9-2, Hatara, Fukaya, Saitama 366-0032, Japan
[2] Graduate School of Materials Sci., Nara Institute of Sci. and Technol., 8916-5, Takayama, Ikoma, Nara 630-0192, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2003年 / 42卷 / 7 A期
关键词：
D O I：
10.1143/jjap.42.4257
中图分类号：
学科分类号：
摘要：
Thin film transistors
引用
收藏
页码：4257 / 4260
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