Electronic states localized at surface defects on Cu(755) studied by angle-resolved ultraviolet photoelectron spectroscopy using synchrotron radiation

被引：0

作者：

Ogawa, Koji ^{[1
]}

Nakanishi, Koji ^{[1
]}

Namba, Hidetoshi ^{[1
]}

机构：

[1] Department of Physical Sciences, Ritsumeikan University, 1-1-1 Nojihigashi, Kasatsu, Shiga 525-8577, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2003年 / 42卷 / 7 B期

关键词：

Adsorption - Annealing - Calculations - Copper - Crystal orientation - Fermi level - Low energy electron diffraction - Oxygen - Photoelectron spectroscopy - Single crystals - Synchrotron radiation - X ray diffraction analysis;

D O I：

10.1143/jjap.42.4684

中图分类号：

学科分类号：

摘要：

Regularly stepped and defective surfaces of Cu(755) were prepared by low- and high-temperature annealing, respectively, of a clean specimen. Electronic states on both surfaces were studied by angle-resolved ultraviolet photoelectron spectroscopy using synchrotron radiation. On the defective Cu(755), we found a new photoelectron peak due to surface defects just below the Fermi level. The dispersion profile of the defect state is derived to be almost flat, which demonstrates the localized nature of the defects. High activity to oxygen adsorption of the defect state was revealed.

引用

页码：4684 / 4687

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