Electronic states localized at surface defects on Cu(755) studied by angle-resolved ultraviolet photoelectron spectroscopy using synchrotron radiation

Regularly stepped and defective surfaces of Cu(755) were prepared by low- and high-temperature annealing, respectively, of a clean specimen. Electronic states on both surfaces were studied by angle-resolved ultraviolet photoelectron spectroscopy using synchrotron radiation. On the defective Cu(755), we found a new photoelectron peak due to surface defects just below the Fermi level. The dispersion profile of the defect state is derived to be almost flat, which demonstrates the localized nature of the defects. High activity to oxygen adsorption of the defect state was revealed.