1.3-1.6-μm-wavelength quantum dots self-formed in GaAs/InAs short-period superlattices grown on InP (411)A substrates

被引：0
|
作者：
机构：
[1] Matsuda, S.
[2] Asahi, H.
[3] Mori, J.
[4] Watanabe, D.
[5] Asami, K.
来源：
Asahi, H. (asahi@sanken.osaka-u.ac.jp) | 2001年 / Japan Society of Applied Physics卷 / 40期
关键词：
D O I：
10.1143/jjap.40.l586
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] LP-MOCVD grown (InAs)(m)(GaAs)(m) short period superlattices on InP
    Oh, DK
    Suh, KS
    Choo, H
    Kim, HM
    Pyun, KE
    Park, HM
    Nahm, S
    JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (03) : 485 - 489
  • [22] Improved optical properties of strain-induced quantum dots self-formed in GaP/InP short period superlattices
    Fudeta, M
    Asahi, H
    Kim, SJ
    Noh, JH
    Asami, K
    Gonda, S
    1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 159 - 162
  • [23] SELF-FORMED IN0.5GA0.5AS QUANTUM DOTS ON GAAS SUBSTRATES EMITTING AT 1.3 MU-M
    MUKAI, K
    OHTSUKA, N
    SUGAWARA, M
    YAMAZAKI, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (12A): : L1710 - L1712
  • [24] High density of self-organized quantum dots formed in (GaP)n(InP)m short period superlattices grown on GaAs (N11)
    Kim, Seong-Jin
    Asahi, Hajime
    Takemoto, Minori
    Noh, Joo-Hyong
    Asami, Kumiko
    Gonda, Shun-ichi
    Applied Surface Science, 1997, 113-114 : 97 - 102
  • [25] High density of self-organized quantum dots formed in (GaP)(n)(InP)(m) short period superlattices grown on GaAs (N11)
    Kim, SJ
    Asahi, H
    Takemoto, M
    Noh, JH
    Asami, K
    Gonda, S
    APPLIED SURFACE SCIENCE, 1997, 113 : 97 - 102
  • [26] Increased hole mobility of p-GaSb/GaAs short-period superlattices grown on InP substrates
    Kudo, M
    Ouchi, K
    Kasai, J
    Mishima, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (4A): : 1592 - 1593
  • [27] Lattice-relaxation process of (InAs)m(GaAs)n strained short-period superlattices grown on GaAs
    Samonji, K
    Yonezu, H
    Ohshima, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (5A): : 2503 - 2507
  • [28] Lattice-relaxation process of (InAs)m(GaAs)n strained short-period superlattices grown on GaAs
    Samonji, Katsuya
    Yonezu, Hiroo
    Ohshima, Naoki
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (5 A): : 2503 - 2507
  • [29] Time-resolved photoluminescence study of strain-induced quantum dots self-formed in GaP/InP short-period superlattice
    Fudeta, M
    Asahi, H
    Asami, K
    Narukawa, Y
    Kawakami, Y
    Noh, JH
    Mori, J
    Watanabe, D
    Fujita, S
    Gonda, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (9AB): : L1006 - L1008
  • [30] Time-resolved photoluminescence study of strain-induced quantum dots self-formed in GaP/InP short-period superlattice
    Dept. of Electron. Sci. and Eng., Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
    不详
    不详
    Jpn J Appl Phys Part 2 Letter, 9 A/B (L1006-L1008):
12345