Study on pulse stress enhanced hot-carrier effects in NMOSFET's

被引：0
|
作者：
Liu, Hong-Xia [1 ]
Hao, Yue [1 ]
机构：
[1] Microelectron. Inst., Xidian Univ., Xi'an 710071, China
来源：
Tien Tzu Hsueh Pao/Acta Electronica Sinica | 2002年 / 30卷 / 05期
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摘要：
MOSFET devices
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页码：658 / 660
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