Study on pulse stress enhanced hot-carrier effects in NMOSFET's

被引：0

作者：

Liu, Hong-Xia ^{[1
]}

Hao, Yue ^{[1
]}

机构：

[1] Microelectron. Inst., Xidian Univ., Xi'an 710071, China

来源：

Tien Tzu Hsueh Pao/Acta Electronica Sinica | 2002年 / 30卷 / 05期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

MOSFET devices

引用

页码：658 / 660

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