Boundary estimation of ballistic transport in the GaAs devices with submicron dimensions

被引：0
|
作者：
Zuev, S.A. [1 ]
Starostenko, V.V. [1 ]
Shadrin, A.A. [1 ]
机构：
[1] Tavriya National University, Yaltinskaya 4, Simpheropol, 95022, Ukraine
来源：
Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika) | 2002年 / 57卷 / 8-9期
关键词：
Ballistics - Electrons - Parameter estimation - Semiconducting gallium arsenide;
D O I：
10.1615/telecomradeng.v57.i8-9.120
中图分类号：
学科分类号：
摘要：
The dominating mechanisms of dissipation in a semiconductor structure based on GaAs have been considered. Time dependences of the free path velocity for the different parameters of the material and the results of estimation of the optimal velocity and the maximal length in which electrons move in the ballistic regime are represented. © 2002 Begell House, Inc.
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页码：99 / 104
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