Boundary estimation of ballistic transport in the GaAs devices with submicron dimensions

被引：0
|
作者：
Zuev, S.A. [1 ]
Starostenko, V.V. [1 ]
Shadrin, A.A. [1 ]
机构：
[1] Tavriya National University, Yaltinskaya 4, Simpheropol, 95022, Ukraine
来源：
Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika) | 2002年 / 57卷 / 8-9期
关键词：
Ballistics - Electrons - Parameter estimation - Semiconducting gallium arsenide;
D O I：
10.1615/telecomradeng.v57.i8-9.120
中图分类号：
学科分类号：
摘要：
The dominating mechanisms of dissipation in a semiconductor structure based on GaAs have been considered. Time dependences of the free path velocity for the different parameters of the material and the results of estimation of the optimal velocity and the maximal length in which electrons move in the ballistic regime are represented. © 2002 Begell House, Inc.
引用
收藏
页码：99 / 104
相关论文
共 50 条
  • [31] Ballistic transport in nanoscale self-switching devices
    CHEN ZiMin1
    2 School of Physics and Telecommunication Engineering
    Science Bulletin, 2011, (21) : 2206 - 2209
  • [32] Ballistic transport and quantum interference in InSb nanowire devices
    Li, Sen
    Huang, Guang-Yao
    Guo, Jing-Kun
    Kang, Ning
    Caroff, Philippe
    Xu, Hong-Qi
    CHINESE PHYSICS B, 2017, 26 (02)
  • [33] Ballistic transport in nanoscale self-switching devices
    Chen ZiMin
    Zheng ZhiYuan
    Xu KunYuan
    Wang Gang
    CHINESE SCIENCE BULLETIN, 2011, 56 (21): : 2206 - 2209
  • [34] EFFECTS OF MINORITY-CARRIER BALLISTIC TRANSPORT ON THE COLLECTOR CURRENT OF SUBMICRON BJTS
    LIOU, JJ
    KAGER, A
    SOLID-STATE ELECTRONICS, 1993, 36 (04) : 655 - 656
  • [35] Unified ballistic transport relation for anisotropic dispersions and generalized dimensions
    Singhal, Jashan
    Jena, Debdeep
    PHYSICAL REVIEW RESEARCH, 2020, 2 (04):
  • [36] Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction
    Sano, Nobuyuki
    SISPAD 2010 - 15TH INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2010, : 177 - 180
  • [37] BALLISTIC AND ADIABATIC ELECTRON-TRANSPORT IN 1 AND 2 DIMENSIONS
    BEENAKKER, CWJ
    PHYSICA B, 1991, 169 (1-4): : 355 - 355
  • [38] Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction
    Sano, Nobuyuki
    Karasawa, Takahiko
    TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS, 2011, 470 : 207 - 213
  • [39] Ballistic transport and rectification in mesoscopic GaAs/AlGaAs cross junctions
    Wieser, U.
    Knop, M.
    Richter, M.
    Kunze, U.
    Reuter, D.
    Wieck, A. D.
    PHASE TRANSITIONS, 2006, 79 (9-10) : 755 - 764
  • [40] BALLISTIC ELECTRON-TRANSPORT PROPERTIES IN GAAS ALGAAS HETEROSTRUCTURES
    NAKAMURA, K
    NIHEY, F
    TOYOSHIMA, H
    NEC RESEARCH & DEVELOPMENT, 1992, 33 (03): : 414 - 423
12345