Characterization of SiC epitaxial wafers by photoluminescence under deep UV excitation

被引：0
|
作者：
Tajima, M. [1 ]
Tanaka, M. [1 ,2 ,3 ]
Hoshino, N. [1 ]
机构：
[1] Institute of Space and Astronautical Sciences, Yoshinodai, Sagamihara 229-8510, Japan
[2] Science University of Tokyo, Kagurazaka, Shinjuku 162-8601, Japan
[3] Agilent Technologies, 9-1 Takakura, Hachioji 192-8510, Japan
来源：
Materials Science Forum | 2002年 / 389-393卷 / 01期
关键词：
D O I：
10.4028/www.scientific.net/msf.389-393.597
中图分类号：
学科分类号：
摘要：
12
引用
收藏
页码：597 / 600
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