Characterization of SiC epitaxial wafers by photoluminescence under deep UV excitation

被引：0
|
作者：
Tajima, M. [1 ]
Tanaka, M. [1 ,2 ,3 ]
Hoshino, N. [1 ]
机构：
[1] Institute of Space and Astronautical Sciences, Yoshinodai, Sagamihara 229-8510, Japan
[2] Science University of Tokyo, Kagurazaka, Shinjuku 162-8601, Japan
[3] Agilent Technologies, 9-1 Takakura, Hachioji 192-8510, Japan
来源：
Materials Science Forum | 2002年 / 389-393卷 / 01期
关键词：
D O I：
10.4028/www.scientific.net/msf.389-393.597
中图分类号：
学科分类号：
摘要：
12
引用
收藏
页码：597 / 600
相关论文
共 50 条
  • [21] DEEP LEVELS IN 6H-SIC WAFERS AND STEP-CONTROLLED EPITAXIAL LAYERS
    JANG, S
    KIMOTO, T
    MATSUNAMI, H
    APPLIED PHYSICS LETTERS, 1994, 65 (05) : 581 - 583
  • [22] Optical characterization of SiC wafers
    Burton, JC
    Pophristic, M
    Long, FH
    Ferguson, I
    WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, 1999, 572 : 201 - 206
  • [23] Photoluminescence of Diamond Films and Ultrafine Diamond under UV Laser Excitation
    V. S. Gorelik
    I. A. Rakhmatullaev
    Inorganic Materials, 2004, 40 : 686 - 689
  • [24] Photoluminescence of diamond films and ultrafine diamond under UV laser excitation
    Gorelik, VS
    Rakhmatullaev, IA
    INORGANIC MATERIALS, 2004, 40 (07) : 686 - 689
  • [25] The Integrated Evaluation Platform for SiC Wafers and Epitaxial Films
    Kitabatake, M.
    Sameshima, J.
    Ishiyama, O.
    Tamura, K.
    Oshima, H.
    Sugiyama, N.
    Yamashita, T.
    Tanaka, T.
    Senzaki, J.
    Matsuhata, H.
    SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 451 - 454
  • [26] Ultraviolet photoluminescence of SiC nanocrystal embedded in silica wafers
    Lu, Sai
    Wang, Chong
    Wang, Wen-Jie
    Yang, Yu
    Rengong Jingti Xuebao/Journal of Synthetic Crystals, 2013, 42 (07): : 1330 - 1335
  • [27] Rapid Characterization of SiC Crystals by Full-wafer Photoluminescence Imaging under Below-gap Excitation
    Isono, H.
    Tajima, M.
    Hoshino, N.
    Sugimoto, H.
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 545 - 548
  • [28] Nondestructive characterization of dislocations and micropipes in high-resistivity 6H-SiC wafers by deep-level photoluminescence mapping
    Tajima, M
    Higashi, E
    Hayashi, T
    Kinoshita, H
    Shiomi, H
    APPLIED PHYSICS LETTERS, 2005, 86 (06) : 1 - 3
  • [29] Spatial characterization of doped SiC wafers
    Burton, JC
    Sun, L
    Pophristic, M
    Li, J
    Long, FH
    Feng, ZC
    Ferguson, I
    WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE, 1998, 512 : 297 - 301
  • [30] A catalytic alloy approach for graphene on epitaxial SiC on silicon wafers
    Iacopi, Francesca
    Mishra, Neeraj
    Cunning, Benjamin Vaughan
    Goding, Dayle
    Dimitrijev, Sima
    Brock, Ryan
    Dauskardt, Reinhold H.
    Wood, Barry
    Boeckl, John
    JOURNAL OF MATERIALS RESEARCH, 2015, 30 (05) : 609 - 616
12345