X-ray radiation response of epitaxial and nonepitaxial n-6H-SiC metal-oxide-semiconductor capacitors

被引：0
|
作者：
De Vasconcelos, Elder Alpes [1 ]
Da Silva Jr., Eronides Felisberto [1 ]
Katsube, Teruaki [2 ]
Yoshida, Sadafumi [2 ]
Nishioka, Yasushiro [3 ]
机构：
[1] Departamento de Física, Universidade Federal de Pernambuco, Cidade Universitaria, Recife-PE, 50670-901, Brazil
[2] Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Urawa-shi, Saitama 338-8570, Japan
[3] Texas Instruments Japan Ltd., Tsukuba Research and Development Center, 17 Miyukigaoka, Tsukuba-shi, Ibaraki 305-0841, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 4 B期
关键词：
Interface trap generation - Low energy x rays;
D O I：
10.1143/jjap.40.2987
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：2987 / 2990
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