EFFECT OF BIAS ON THE RESPONSE OF METAL-OXIDE-SEMICONDUCTOR DEVICES TO LOW-ENERGY X-RAY AND CO-60 IRRADIATION

被引：29

作者：

FLEETWOOD, DM ^{[1
]}

WINOKUR, PS ^{[1
]}

DOZIER, CM ^{[1
]}

BROWN, DB ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 18期

关键词：

D O I：

10.1063/1.99116

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1514 / 1516

页数：3

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