Secondary defect distribution in high energy ion implanted 4H-SiC

被引：0
|
作者：
机构：
[1] Ohno, T.
[2] Kobayashi, N.
来源：
Ohno, T. | 1600年 / Trans Tech Publ Ltd, Uetikon-Zuerich, Switzerland卷 / 338期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Point defect production efficiency in ion irradiated 4H-SiC
    Calcagno, L.
    Ruggiero, A.
    Musumeci, P.
    Cuttone, G.
    La Via, F.
    Foti, G.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 257 : 279 - 282
  • [22] Investigation of surface morphology and ion activation of aluminium implanted 4H-SiC
    SONG QingWen *
    Science China(Technological Sciences), 2012, (12) : 3401 - 3404
  • [23] Characterization of ion-implanted 4H-SiC Schottky barrier diodes
    Wang Shou-Guo
    Zhang Yan
    Zhang Yi-Men
    Zhang Yu-Ming
    CHINESE PHYSICS B, 2010, 19 (01)
  • [24] Investigation of surface morphology and ion activation of aluminium implanted 4H-SiC
    SONG QingWen ZHANG YuMing ZHANG YiMen TANG XiaoYan Key Laboratory of Wide BandGap Semiconductor Materials and Devices School of Microelectronics Xidian University Xian China
    Science China(Technological Sciences), 2012, 55 (12) : 3401 - 3404
  • [25] Investigation of surface morphology and ion activation of aluminium implanted 4H-SiC
    Song QingWen
    Zhang YuMing
    Zhang YiMen
    Tang XiaoYan
    SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 2012, 55 (12) : 3401 - 3404
  • [26] Characterization of ion-implanted 4H-SiC Schottky barrier diodes
    王守国
    张岩
    张义门
    张玉明
    Chinese Physics B, 2010, 19 (01) : 456 - 460
  • [27] Investigation of surface morphology and ion activation of aluminium implanted 4H-SiC
    QingWen Song
    YuMing Zhang
    YiMen Zhang
    XiaoYan Tang
    Science China Technological Sciences, 2012, 55 : 3401 - 3404
  • [28] Electrical characteristics of Al+ ion-implanted 4H-SiC
    Tanaka, H
    Tanimoto, S
    Yamanaka, M
    Hoshi, M
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 803 - 806
  • [29] Vanadium ion implanted guard rings for high-voltage 4H-SiC Schottky rectifiers
    Hatayama, T
    Yoneda, T
    Nakata, T
    Watanabe, M
    Kimoto, T
    Matsunami, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (12A): : L1216 - L1218
  • [30] Electrical characteristics and surface morphology for arsenic ion-implanted 4H-SiC at high temperature
    Senzaki, Junji
    Fukuda, Kenji
    Imai, Seiji
    Tanaka, Yasunori
    Kobayashi, Naoto
    Tanoue, Hisao
    Okushi, Hideyo
    Arai, Kazuo
    Materials Science Forum, 2000, 338
12345