Analytical investigation of the temperature dependence of GaAs FET equivalent circuit parameters

被引：0

作者：

Pesare, M. ^{[1
]}

Giorgio, A. ^{[1
]}

Perri, A.G. ^{[1
]}

机构：

[1] Dipto. di Elettrotecn. ed Elettron., Politecnico di Bari, Bari, Italy

来源：

Alta Frequenza Rivista Di Elettronica | 2001年 / 13卷 / 03期

关键词：

Computer simulation - Current voltage characteristics - Heat resistance - Semiconducting gallium arsenide - Thermal conductivity - Thermoanalysis;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

In this paper a 2-D I-V MESFET model coupled with a 3D thermal model is presented. The temperature dependence of the velocity-electric field expression proposed by Chang et al. has been considered so as to evaluate the device characteristics and small-signal parameters at the actual channel temperature. The effect of the device self-heating has been included by a coupled electrothermal simulation. The thermal dependence of all physical parameters involved both in the electric model and in the thermal model has been taken into account.

引用

页码：35 / 39

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