Analytical investigation of the temperature dependence of GaAs FET equivalent circuit parameters

被引:0
|
作者
Pesare, M. [1 ]
Giorgio, A. [1 ]
Perri, A.G. [1 ]
机构
[1] Dipto. di Elettrotecn. ed Elettron., Politecnico di Bari, Bari, Italy
来源
Alta Frequenza Rivista Di Elettronica | 2001年 / 13卷 / 03期
关键词
Computer simulation - Current voltage characteristics - Heat resistance - Semiconducting gallium arsenide - Thermal conductivity - Thermoanalysis;
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摘要
In this paper a 2-D I-V MESFET model coupled with a 3D thermal model is presented. The temperature dependence of the velocity-electric field expression proposed by Chang et al. has been considered so as to evaluate the device characteristics and small-signal parameters at the actual channel temperature. The effect of the device self-heating has been included by a coupled electrothermal simulation. The thermal dependence of all physical parameters involved both in the electric model and in the thermal model has been taken into account.
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页码:35 / 39
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