Aluminum incorporation into 4H-SiC layers during epitaxial growth in a hot-wall CVD system

被引：0
|
作者：
Wagner, G. [1 ]
Leitenberger, W. [1 ]
Irmscher, K. [1 ]
Schmid, F. [2 ]
Laube, M. [2 ]
Pensl, G. [2 ]
机构：
[1] Institute of Crystal Growth, Max-Born-Str. 2, DE-12489 Berlin, Germany
[2] Institute of Applied Physics, University of Erlangen-Nürnberg, DE-91058 Erlangen, Germany
来源：
Materials Science Forum | 2002年 / 389-393卷 / 01期
关键词：
Aluminum - Carrier concentration - Chemical vapor deposition - Concentration (process) - Epilayers - Silicon carbide;
D O I：
10.4028/www.scientific.net/msf.389-393.207
中图分类号：
学科分类号：
摘要：
Experimental results are presented for aluminium incorporation in Si-face 4H-SiC epilayers grown in a hot-wall reactor by chemical vapour deposition (CVD). Epitaxial growth was performed using silane and propane as process gases, and trimethylaluminium (TMA) as the doping source. The incorporation of aluminium has been studied in the concentration range from 3×10 14 cm-3 to 2×1018 cm-3. In addition, the influence of growth rate on the carrier concentration in the epilayers is studied. © 2002 Trans Tech Publications.
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页码：207 / 210
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