Aluminum incorporation into 4H-SiC layers during epitaxial growth in a hot-wall CVD system

被引：0
|
作者：
Wagner, G. [1 ]
Leitenberger, W. [1 ]
Irmscher, K. [1 ]
Schmid, F. [2 ]
Laube, M. [2 ]
Pensl, G. [2 ]
机构：
[1] Institute of Crystal Growth, Max-Born-Str. 2, DE-12489 Berlin, Germany
[2] Institute of Applied Physics, University of Erlangen-Nürnberg, DE-91058 Erlangen, Germany
来源：
Materials Science Forum | 2002年 / 389-393卷 / 01期
关键词：
Aluminum - Carrier concentration - Chemical vapor deposition - Concentration (process) - Epilayers - Silicon carbide;
D O I：
10.4028/www.scientific.net/msf.389-393.207
中图分类号：
学科分类号：
摘要：
Experimental results are presented for aluminium incorporation in Si-face 4H-SiC epilayers grown in a hot-wall reactor by chemical vapour deposition (CVD). Epitaxial growth was performed using silane and propane as process gases, and trimethylaluminium (TMA) as the doping source. The incorporation of aluminium has been studied in the concentration range from 3×10 14 cm-3 to 2×1018 cm-3. In addition, the influence of growth rate on the carrier concentration in the epilayers is studied. © 2002 Trans Tech Publications.
引用
收藏
页码：207 / 210
相关论文
共 50 条
  • [21] Chloride-based fast homoepitaxial growth of 4H-SiC films in a vertical hot-wall CVD
    Yan Guoguo
    Zhang Feng
    Niu Yingxi
    Yang Fei
    Liu Xingfang
    Wang Lei
    Zhao Wanshun
    Sun Guosheng
    Zeng Yiping
    JOURNAL OF SEMICONDUCTORS, 2016, 37 (06)
  • [22] Chloride-based fast homoepitaxial growth of 4H-SiC films in a vertical hot-wall CVD
    闫果果
    张峰
    钮应喜
    杨霏
    刘兴昉
    王雷
    赵万顺
    孙国胜
    曾一平
    Journal of Semiconductors, 2016, 37 (06) : 19 - 24
  • [23] Epitaxial growth of 4H-SiC in a vertical hot-wall CVD reactor: comparison between up- and down-flow orientations
    Zhang, J.
    Ellison, A.
    Danielsson, Ö.
    Henry, A.
    Janzén, E.
    Materials Science Forum, 2001, 353-356 : 91 - 94
  • [24] Epitaxial growth of 4H-SiC in a vertical hot-wall CVD reactor:: Comparison between up- and down-flow orientations
    Zhang, J
    Ellison, A
    Danielsson, Ö
    Henry, A
    Janzén, E
    SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 91 - 94
  • [25] Surface morphology of SiC epitaxial layers grown by vertical hot-wall type CVD
    Takahashi, K
    Uchida, M
    Yokogawa, T
    Kusumoto, O
    Yamashita, K
    Miyanaga, R
    Kitabatake, M
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 243 - 246
  • [26] Growth of SiC by Hot-Wall CVD and HTCVD
    Kordina, O.
    Hallin, C.
    Henry, A.
    Bergman, J. P.
    Physica Status Solidi (B): Basic Research, 202 (01):
  • [27] Growth of SiC by ''hot-wall'' CVD and HTCVD
    Kordina, O
    Hallin, C
    Henry, A
    Bergman, JP
    Ivanov, I
    Ellison, A
    Son, NT
    Janzen, E
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1997, 202 (01): : 321 - 334
  • [28] Spectra associated with stacking faults in 4H-SiC grown in a hot-wall CVD reactor
    Bai, S
    Wagner, G
    Shishkin, E
    Choyke, WJ
    Devaty, RP
    Zhang, M
    Pirouz, P
    Kimoto, T
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 589 - 592
  • [29] Fast epitaxial growth of 4H-SiC by chimney-type vertical hot-wall chemical vapor deposition
    Kimoto, T., 1600, Japan Society of Applied Physics (40):
  • [30] Growth and characterization of 4H-SiC in vertical hot-wall chemical vapor deposition
    Fujihira, K
    Kimoto, T
    Matsunami, H
    JOURNAL OF CRYSTAL GROWTH, 2003, 255 (1-2) : 136 - 144
12345