Modeling and simulation with spice of the new power SiC JFET

被引：0
|
作者：
Lotfi, Messaadi [1 ]
Zohir, Dibi [1 ]
机构：
[1] Department of Electronics, Advanced Electronic Laboratory (LEA), Batna University, Avenue Mohamed El-hadi Boukhlouf, Batna, Algeria
来源：
International Journal of u- and e- Service, Science and Technology | 2014年 / 7卷 / 05期
关键词：
D O I：
10.14257/ijunnesst.2014.7.5.07
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：79 / 86
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